creat by art - low power loss, high efficiency - guardring for overvoltage protection - high surge current capability - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 packing code with suffix "g" means green compound (halogen-free) terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test v rrm 45 60 80 100 150 200 v v rms 31 42 56 70 105 140 v v dc 45 60 80 100 150 200 v i f(av) a i rrm a 0.70 0.78 0.60 0.68 0.82 0.90 0.73 0.78 40 15 dv/dt v/ s r jc c/w t j c t stg c document number: ds_d1411035 version: d14 0.94 0.82 10 mbrf 3080ct 0.5 mbrf 30150ct 0.95 ito-220ab mbrf3045ct-y thru mbrf30200ct-y taiwan semiconductor dual common cathode schottk y rectifier features - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec mbrf 30100 ct-y mbrf 30200 ct-y unit mbrf 3080 ct-y mbrf 30150 ct-y mechanical data case: ito-220ab polarity: as marked mounting torque: 0.56 nm max. weight: 1.7 g (approximately) 30 peak repetitive forward current (rated vr, square wave, 20khz) peak repetitive reverse surge current (note 1) i fsm 200 maximum ratings and electrical characteristics (t a =25c unless otherwise noted) parameter symbol mbrf 3045 ct-y mbrf 3060 ct-y a i frm 30 maximum repetitive peak reverse voltage maximum rms voltage v 1.05 0.92 maximum instantaneous forward voltage (note 2) i f =15a, t j =25c i f =15a, t j =125c i f =30a, t j =25c i f =30a, t j =125c 0.80 marking code mbrf 3045ct mbrf 3060ct mbrf 30100ct mbrf 30200ct 1 maximum dc blocking voltage maximum average forward rectified current note 2: pulse test with pw=300 s, 1% duty cycle typical thermal resistance 4 operating junction temperature range - 55 to +150 a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load ma voltage rate of change (rated v r ) v f 0.85 0.72 storage temperature range - 55 to +150 note 1: tp = 2.0 s, 1.0khz 10000 maximum reverse current @ rated vr t j =25 c t j =125 c i r 0.2
part no. part no. mbrf3060ct-y mbrf3060ct-y (t a =25c unless otherwise noted) document number: ds_d1411035 version: d14 mbrf3045ct-y thru mbrf30200ct-y taiwan semiconductor ordering information packing code packing code suffix package mbrf30xxct-y (note 1) g example preferred p/n packing code packing code suffix c0 g ito-220ab note 1: "xx" defines voltage from 45v (mbrf3045ct-y) to 200v (mbrf30200ct-y) 50 / tube packing green compound description ratings and characteristics curves mbrf3060ct-y c0 c0 mbrf3060ct-y c0g c0 0 5 10 15 20 25 30 35 50 60 70 80 90 100 110 120 130 140 150 average forward a current (a) case temperature ( o c) fig.1 forward current derating curve resistive or inductiveload with heatsink 50 75 100 125 150 175 200 225 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 2 maximum non-repetitive forward surge current per leg 8.3ms single half sine wave 0.001 0.01 0.1 1 10 100 0 20406080100 instantaneous reverse c urrent (ma) percent of rated peak reverse voltage (%) fig. 4 typical reverse characteristics per leg t j =75 c t j =125 c 45ct-y 60ct-y - 200ct-y t j =25 c 0.01 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 instantaneous forward current (a) forward voltage (v) fig. 3 typical forward characteristics per leg pulse width=300 s 1% duty cycle mbrf3045ct-y mbrf3060ct-y mbrf3080ct-y -100ct-y mbrf30150ct-y-200ct-y
min max min max a 4.30 4.70 0.169 0.185 b 2.50 3.16 0.098 0.124 c 2.30 2.96 0.091 0.117 d 0.46 0.76 0.018 0.030 e 6.30 6.90 0.248 0.272 f 9.60 10.30 0.378 0.406 g 3.00 3.40 0.118 0.134 h 0.95 1.45 0.037 0.057 i 0.50 0.90 0.020 0.035 j 2.40 3.20 0.094 0.126 k 14.80 15.50 0.583 0.610 l - 4.10 - 0.161 m 12.60 13.80 0.496 0.543 n - 1.80 - 0.071 o 2.41 2.67 0.095 0.105 p/n = marking code g = green compound yww = date code f = factory code document number: ds_d1411035 version: d14 marking diagram mbrf3045ct-y thru mbrf30200ct-y taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) ito-220ab 100 1000 10000 0.1 1 10 100 junction capacitance (pf) a reverse voltage (v) fig. 5 typical junction capacitance per leg f=1.0mhz vsig=50mvp-p 45ct-y 60ct-y 80ct-y - 200ct-y 0.1 1 10 100 0.01 0.1 1 10 100 transient thermal impedance ( /w) t-pulse duration(s) fig. 6 typical transient thermal impedance per leg
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